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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management. Package Drawings (unit : mm) 5.7 0.1 2.0 0.2 1.5 0.1 3.65 0.1 FEATURES 1.0 1 0.5 0.1 2 3 * Can be driven by a 2.5 V power source. * New-type compact package. Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. * Low on-state resistance. RDS(ON) : 0.29 MAX. @VGS = -2.5 V, ID = -0.5 A RDS(ON) : 0.19 MAX. @VGS = -4.0 V, ID = -1.0 A 0.5 0.1 2.1 0.4 0.05 0.85 0.1 4.2 Equivalent Circuit Electrode Connection 1. Source 2. Drain 3. Gate ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -12 8.0 2.5 5.0* 2.0** 150 -55 to +150 V V A A W C C Gate Protect Diode Gate Drain Internal Diode Source Marking : UA3 * PW 10 ms, Duty Cycle 1 % ** Mounted on ceramic board of 7.5 cm2 x 0.7 mm Document No. D11449EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan 5.4 0.25 0.55 (c) 1996 2SJ462 ELECTRICAL SPECIFICATIONS (TA = +25 C) Parameter Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) |yfs| RDS(on)1 -0.7 1.5 195 290 -1.0 MIN. TYP. MAX. -10 10 -1.3 Unit Conditions VDS = -12 V, VGS = 0 VGS = 8.0 V, VDS = 0 VDS = -3.0 V, ID = -1.0 mA VDS = -3.0 V, ID = -1.0 A VGS = -2.5 V, ID = -0.5 A A A V S m RDS(on)2 135 190 m VGS = -4.0, ID = -1.0 A Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 940 835 495 45 225 140 195 12 2 7 -0.86 150 160 pF pF pF ns ns ns ns nC nC nC V ns nC VDS = -3.0 V, VGS = 0 f = 1.0 MHz VDD = -3.0 V, ID = -1.0 A VGS(on) = -3.0 V, RG = 10 RL = 3.0 VDS = -8 V, ID = -2.5 A VGS = -3.0 V, IG = -2 mA IF = -2.5 A, VGS = 0 IF = -2.5 A, VGS = 0 di/dt = 50 A/s 2 2SJ462 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -10 1 m FORWARD BIAS SAFE OPERATING AREA 80 dT - Derating Factor - % ID - Drain Current - A 10 s m s 60 PW -1 DC =1 00 ms 40 20 Single Pulse 0 0 30 60 90 120 150 TA - Ambient Temperature - C -0.1 -1 -10 VDS - Drain to Source Voltage - V -100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -5 -5 V -10 -4 V -3 V ID - Drain Current - A -1 TRANSFER CHARACTERISTICS VDS = -3 V -4 ID - Drain Current - A -3 -0.1 TA = 125 C TA = 75 C TA = 25 C TA = -25 C -2 -2 V -0.01 -1 VGS = -1 V 0 0 -2 -4 -6 -8 -10 VDS - Draint to Source Voltage - V -0.001 -0.0001 0 -0.5 -1.0 -1.5 -2.0 VGS - Gate to Source Voltage - V -2.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 IyfsI - Forward Transfer Admittance - S RDS(on) - Drain to Source On-State Resistance - VDS = -3 V 0.6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = -2.5 V 0.5 0.4 0.3 TA = 125 C 75 C 0.2 0.1 0 -0.001 25 C -25 C 1 TA = -25 C 25 C 75 C 125 C 0.1 0.01 -0.0001 -0.001 -0.01 -0.1 -1 -0.01 -0.1 -1 -10 ID - Drain Current - A ID - Drain Current - A 3 2SJ462 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.3 ID = -2.5 A RDS(on) - Drain to Source On-State Resistance - 0.6 VGS = -4 V 0.5 0.4 0.3 TA = 125 C 0.2 0.1 0 -0.001 75 C 25 C -25 C RDS(on) - Drain to Source On-State Resistance - 0.2 -1.0 A -0.5 A 0.1 -0.01 -0.1 -1 -10 0 0 -2 -4 -6 -8 -10 ID - Drain Current - A VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 VGS = 0 f = 1 MHz 1000 SWITCHING CHARACTERISTICS VDD = -3 V VGS(on) = -3 V Rin = 10 Ciss,Coss,Crss - Capacitance - pF td(on),tr,td(off),tf - Switching Time - ns tr tf 100 td(off) td(on) 1 Ciss Coss Crss 0.1 -0.1 -1 VDS - Drain to Source Voltage - V -10 10 -0.1 -1 ID - Draint Current - A -10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -10 12 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 VDS = -8 V ID = -2.5 A VGS -1 VDS - Drain to Source Voltage - V 8 VDS 4 -0.1 4 2 -0.01 -0.001 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 0 0 8 16 24 32 40 QG - Gate Charge - nC VSD - Source to Drain Voltage - V 4 VGS - Gate to Source Voltage - V ID - Reverse Drain Current - A 2SJ462 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SJ462 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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